JPH0147023B2 - - Google Patents

Info

Publication number
JPH0147023B2
JPH0147023B2 JP55148156A JP14815680A JPH0147023B2 JP H0147023 B2 JPH0147023 B2 JP H0147023B2 JP 55148156 A JP55148156 A JP 55148156A JP 14815680 A JP14815680 A JP 14815680A JP H0147023 B2 JPH0147023 B2 JP H0147023B2
Authority
JP
Japan
Prior art keywords
layer
active layer
forming
impurity
impurity ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55148156A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5772385A (en
Inventor
Kimyoshi Yamazaki
Masayuki Ino
Katsuhiko Kurumada
Masamichi Oomori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55148156A priority Critical patent/JPS5772385A/ja
Publication of JPS5772385A publication Critical patent/JPS5772385A/ja
Publication of JPH0147023B2 publication Critical patent/JPH0147023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP55148156A 1980-10-24 1980-10-24 Manufacture of field-effect transistor Granted JPS5772385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148156A JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148156A JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5772385A JPS5772385A (en) 1982-05-06
JPH0147023B2 true JPH0147023B2 (en]) 1989-10-12

Family

ID=15446506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148156A Granted JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5772385A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145164A (ja) * 1982-02-24 1983-08-29 Fujitsu Ltd 半導体装置の製造方法
JPS61163662A (ja) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS5772385A (en) 1982-05-06

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